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| NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt ZTX452 ZTX453 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX452 100 80 5 2 1 1 E-Line TO92 Compatible ZTX453 120 100 UNIT V V V A A W C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cobo 40 10 150 15 3-177 100 80 5 0.1 0.1 0.7 1.3 150 40 10 150 15 ZTX452 MIN. 120 100 5 0.1 0.1 0.7 1.3 200 ZTX453 MAX. V V V A A A UNIT CONDITIONS. IC=100A IC=10mA* IE=100A VCB=80V VCB=100V VEB=4V IC=150mA, IB=15mA* IC=150mA, IB=15mA* IC=150mA, VCE=10V* IC=1A, VCE=10V* MAX. MIN. V V MHz pF IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz ZTX452 ZTX453 TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain (%) 0.8 VCE(sat) - (Volts) 80 VCE=10V 60 40 0.6 IC/IB=10 0.4 0.2 20 0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 1.4 VBE(sat) - (Volts) 1.2 IC/IB=10 1.4 1.2 1.0 0.8 0.6 0.4 0.01 VBE - (Volts) 1.6 VCE=10V 1.0 0.8 0.6 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C VBE(on) v IC IC - Collector Current (Amps) 1 D.C. 1s 100ms 10ms 1.0ms 300s 100s ZTX452 ZTX453 0.1 0.01 0.1 1 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-178 |
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